Loren Data's SAM Daily™

SAMDAILY.US - ISSUE OF OCTOBER 25, 2025 SAM #8734
SPECIAL NOTICE

A -- Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices

Notice Date

10/23/2025 1:20:20 PM
 

Notice Type

Special Notice
 

NAICS

334413 — Semiconductor and Related Device Manufacturing
 

Contracting Office

BATTELLE ENERGY ALLIANCE�DOE CNTR Idaho Falls ID 83415 USA
 

ZIP Code

83415
 

Solicitation Number

BA-1441
 

Response Due

11/14/2025 11:00:00 PM
 

Archive Date

11/30/2025
 

Point of Contact

Javier Martinez
 

E-Mail Address

javier.martinez@inl.gov
(javier.martinez@inl.gov)
 

Description

High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices Description Researchers at INL have developed a process to deposit high-quality epitaxial crystalline thin films of uranium and thorium, as well as their nitrides, using molecular beam epitaxy (MBE). MBE is a non-equilibrium vacuum deposition technique that provides precise control over the composition and interfaces of the material, making it ideal for fabricating high-purity, defect-free, single-crystalline thin films. Actinide thin films, particularly those of uranium and thorium, present significant challenges for ab initio modeling due to their complex electron correlations. High-quality samples are essential for providing feedback to develop accurate models. Additionally, the strong electron correlations in actinide materials make them promising candidates for next-generation computing technologies. By tuning the growth parameters, including temperature, pressure, growth rate, and flux ratios, researchers can controllably form high-quality actinide thin films. This technique also allows for seamless integration with existing semiconductor technology, facilitating the development of advanced device structures. Key Benefits High-Quality Thin Films: MBE enables the fabrication of high-purity, defect-free, single-crystalline thin films of uranium and thorium, as well as their nitrides. Precise Control: The technique provides precise control over growth parameters, ensuring the formation of high-quality materials suitable for advanced applications. Integration with Existing Technology: the ability to fabricate epitaxial films at wafer scale will facilitate seamless integration with existing semiconductor technology, making it suitable for the development of advanced electronic and computing devices. Advanced Modeling Support: High-quality actinide thin films provide essential feedback for developing accurate ab initio models, facilitating further research and development. Market Applications Quantum Computing: The unique properties of actinide materials can be harnessed to explore new computational paradigms. The precise control and high-quality deposition of actinide thin films make them ideal candidates for developing next-generation quantum computing devices. Advanced Research: The technology can be utilized by researchers focused on studying the complex electron correlations in actinide materials. High-quality samples are essential for advancing theoretical and experimental research in this field. Optoelectronics: The ability to fabricate high-quality crystalline thin films of actinides and their nitrides with strong electron correlations and spin orbit coupling can be leveraged to develop advanced electronic devices. Semiconductor Industry: Epitaxial films are more easily integrated with existing semiconductor technology than more disordered crystals, which can open up new possibilities for creating advanced device structures, potentially leading to innovations in various high-tech applications. Advantage Molecular beam epitaxy (MBE) offers several advantages over other deposition techniques, such as DC sputtering, which has been previously used to form monocrystalline actinide-nitride thin films. MBE is regarded as the pinnacle of vacuum deposition techniques due to its ability to create atomically precise layers and use high-purity sources. While MBE has been used to deposit all-metal alloys, it has not been previously employed for actinide-nitrides. This novel application of MBE differentiates the technology from existing methods and provides a unique advantage in producing high-quality actinide thin films with tunable properties.
 

Web Link

SAM.gov Permalink
(https://sam.gov/workspace/contract/opp/1a561f63a22244e4a38603b6699b1a7b/view)
 

Place of Performance

Address: Idaho Falls, ID 83401, USA

Zip Code: 83401

Country: USA
 

Record

SN07626199-F 20251025/251023230032 (samdaily.us)
 

Source

SAM.gov Link to This Notice
(may not be valid after Archive Date)

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